Part Number Hot Search : 
LTC12 ONDUC 2SB62 9K9FKR3 TYN25 DTC114 PCS240DL SF30DG
Product Description
Full Text Search
 

To Download BDW64B Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 bdw64, bdw64a, BDW64B, bdw64c, bdw64d pnp silicon power darlingtons ? designed for complementary use with bdw63, bdw63a, bdw63b, bow63c and bdw63d ? 60 w at 25c case temperature ? 6 a continuous collector current ? minimum hfe of 750 at 3v, 2 a to-220 p/ (topv h c : <;. f : t < kckage iew) 1 2 3 o pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-base voltage (ie = 0) collector-emitter voltage (ib = 0) (see note 1) bdw64 bdw64a BDW64B bdw64c bdw64d bdw64 bdw64a BDW64B bdw64c bdw64d emitter-base voltage continuous collector current continuous base current continuous device dissipation at (or below) 25"c case temperature (see note 2) continuous device dissipation at (or below) 25'c free air temperature (see note 3) undamped inductive load energy (see note 4) operating junction temperature range operating temperature range operating free-air temperature range symbol vcbo vceo vebo 'c ib ptot ptot %lic2 tj tstg ta value -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -6 -0.1 60 2 50 -65to+150 -65 to +150 -65 to +150 unit v v v a a w w mj ?c c ?c motes: 1 . these values apply when the base-emitter diode is open circuited. 2. derate linearly to 150c case temperature at the rate of 0.48 w/c. 3. derate linearly to 1 50c free air temperature at the rate of 1 6 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20mh, lb(on) = '5 ma' rbe = 100 q, vbe(off) = 0, rs = 0.1 0, vcc = -20 v. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bdw64, bdw64a, BDW64B, bdw64c, bdw64d pnp silicon power darlingtons electrical characteristics at 25c case temperature (unless otherwise noted) parameter collector-emitter (br)ceo breakdown voltage collector-emitter ceo cut-off current collector cut-off 'ceo current emitter cut-off 'ebo current forward current fe transfer ratio base-emitter vbe<"> voltage collector-emitter ce(sat) saturation voltage parallel diode ec forward voltage test conditions bdw64 bdw64a lc= -30ma ib = 0 (see note 5) BDW64B bdw64c bdw64d vce= -30v ib = 0 bdw64 vce= -30v ib = 0 bdw64a vce= -40v ib = 0 BDW64B vce= -50v ib = 0 bdw64c vce= -60v ib = 0 bdw64d vcb= -45v ie = 0 bdw64 vcb= -60v ie = 0 bdw64a vcb= -80v ie = 0 BDW64B vcb = -100v ie = 0 bdw64c vcb = -120v ie = 0 bdw64d vcb= -45v ie = 0 tc = 150c bdw64 vcb = -60 v ie = 0 tc = 1 50c bdw64a vcb= -80v ie = 0 tc*150c BDW64B vcb = -100v ie = 0 tc = 150c bdw64c vcb = -120v ie = 0 tc = 150c bdw64d veb = -5v lc = 0 vce = -3v iq = -2 a vce= -3v ic = -6a (see notes 5 and 6) vce= -3v ic = -2a (see notes 5 and 6) ib- -12ma 'c~'2 (see notes 5 and 6) |b_ -60ma ic = -6a if= _6 a ir = 0 min -45 -60 -80 -100 -120 750 100 typ max -0.5 -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -0.2 -5 -5 -5 -5 -5 -2 20000 -2.5 -2.5 -4 -35 unit v ma ma ma v v v notes: 5. these parameters must be measured using pulse techniques, tp = 300 ms, duty cycle ; 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter rejc junction to case thermal resistance roja junction to free air thermal resistance min typ max 2.08 62.5 unit c/w c/w resistive-load-switching characteristics at 25c case temperature parameter ton turn-on time tob turn-off time test conditions t ic = -3a lb(on) = -12ma lb(off) = 12ma vbe(off) = 4.5 v rl = 10q tp = 20^,dc<2% min typ 1 5 max unit ms ms voltage and current values shown are nominal; exact values vary slightly with transistor parameters.


▲Up To Search▲   

 
Price & Availability of BDW64B

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X